Cho, S.-J., Li, X. , Guiney, I., Floros, K., Hemakumara, D., Wallis, D.J., Humphreys, C. and Thayne, I.G. (2018) Impact of stress in ICP-CVD SiN x passivation films on the leakage current in AlGaN/GaN HEMTs. Electronics Letters, 54(15), pp. 947-949. (doi: 10.1049/el.2018.1097)
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Abstract
The impact of the stress in room temperature inductively coupled plasma chemical vapour deposited (ICP-CVD) SiN x surface passivation layers on off-state drain ( I DS-off) and gate leakage currents ( I GS) in AlGaN/GaN high electron mobility transistors (HEMTs) is reported. I DS-off and I GS in 2 μm gate length devices were reduced by up to four orders of magnitude to ∼10 pA/mm using a compressively stressed bilayer SiN x passivation scheme. In addition, I on/ I off of ∼10 11 and subthreshold slope of 68 mV/dec were obtained using this strain engineered surface passivation approach.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and HEMAKUMARA, Dilini and FLOROS, KONSTANTINOS and Li, Dr Xu and Cho, Dr Sung-Jin |
| Authors: | Cho, S.-J., Li, X., Guiney, I., Floros, K., Hemakumara, D., Wallis, D.J., Humphreys, C., and Thayne, I.G. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Electronics Letters |
| Publisher: | Institution of Engineering and Technology |
| ISSN: | 0013-5194 |
| ISSN (Online): | 1350-911X |
| Published Online: | 29 May 2018 |
| Copyright Holders: | Copyright © 2018 The Institution of Engineering and Technology |
| First Published: | First published in Electronics Letters 54(15): 947-949 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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