Millar, D. et al. (2017) Electrical and Chemical Analysis of the In-situ H2 Plasma Cleaned InGaSb-Al2O3 Interface. 48th IEEE Semiconductor Interface Specialists Conference (SISC 2017), San Diego, CA, USA, 6 -9 Dec 2017.
|
Text
162638.pdf - Accepted Version 1MB |
Publisher's URL: http://www.ieeesisc.org/past.html
Abstract
No abstract available.
Item Type: | Conference or Workshop Item |
---|---|
Keywords: | InGaSb, ALD, plasma passivation, MOSCAP, XPS. |
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Fu, Mr Yen-Chun and Steer, Dr Matthew and Li, Dr Xu and Thayne, Prof Iain and Millar, Mr David and Peralagu, Mr Uthayasankaran |
Authors: | Millar, D., Supardan, S., Peralagu, S., Sousa, M., Li, X., Dhanak, V. R., Fu, Y.-C., Steer, M., Schmid, H., Mitrovic, I. Z., and Thayne, I.G. |
Subjects: | T Technology > TK Electrical engineering. Electronics Nuclear engineering |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Research Group: | Micro- and Nanotechnology |
Copyright Holders: | Copyright © 2017 The Authors |
Publisher Policy: | Reproduced with the permission of the publisher |
University Staff: Request a correction | Enlighten Editors: Update this record