1.55 µm AlGaInAs/InP sampled grating laser diodes for mode-locking at THz frequencies

Hou, L. , Tang, S., Hou, B., Liang, S. and Marsh, J. H. H. (2018) 1.55 µm AlGaInAs/InP sampled grating laser diodes for mode-locking at THz frequencies. IEEE Journal of Selected Topics in Quantum Electronics, 24(6), 1102508. (doi: 10.1109/JSTQE.2018.2827672)

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We report mode locking in lasers integrated with semiconductor optical amplifiers, using either conventional or phase shifted sampled grating distributed Bragg reflectors(DBRs). For a conventional sampled grating with a continuous grating coupling coefficient of ~80 cm-1, mode-locking was observed at a fundamental frequency of 628 GHz and second harmonic of 1.20 THz. The peak output power was up to 142 mW. In the phase shifted sampled grating design, the grating is present along the entire length of the reflector with π-phase shift steps within each sampled section. The effective coupling coefficient is therefore increased substantially. Although the continuous grating coupling coefficient for the phase shifted gratings was reduced to ~23 cm-1 because of a different fabrication technology, the lasers demonstrated mode locking at fundamental repetition frequencies of 620 GHz and 1 THz, with a much lower level of amplified spontaneous emission seen in the output spectra than from conventional sampled grating devices. Although high pulse reproducibility and controllability over a wide operation range was seen for both types of grating, the π-phase-shifted gratings already demonstrate fundamental mode-locking to 1 THz. The integrated semiconductor optical amplifier makes sampled grating DBR lasers ideal pump sources for generating THz signals through photomixing.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Hou, Bin and Marsh, Professor John and Tang, Song and Hou, Dr Lianping
Authors: Hou, L., Tang, S., Hou, B., Liang, S., and Marsh, J. H. H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Selected Topics in Quantum Electronics
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1558-4542
Published Online:20 April 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Journal of Selected Topics in Quantum Electronics 24(6): 1102508
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
453111High power, high frequency mode-locked semiconductor lasersAnn BryceEngineering and Physical Sciences Research Council (EPSRC)EP/E065112/1ENG - ENGINEERING ELECTRONICS & NANO ENG