Transforming the Short-Term Sensing Stimuli to Long-Term E-Skin Memory

Liu, F. , Taube, W., Yogeswaran, N., Gregory, D. and Dahiya, R. (2017) Transforming the Short-Term Sensing Stimuli to Long-Term E-Skin Memory. In: IEEE Sensors 2017, Glasgow, UK, 30 Oct - 01 Nov 2017, ISBN 9781509010127 (doi: 10.1109/ICSENS.2017.8234187)

160005.pdf - Accepted Version



A Tantalum Pentoxide (Ta2O5) based resistive nonvolatile memory device with bipolar switching behaviour was developed to demonstrate the new concept of memory in e-skin. The memory device showed stable switching behavior under preprogrammed voltage stimuli after an initial forming process. The memory cell was then integrated with a commercial tactile sensor with a new interface circuit, which enabled the switching of the memory cell through the electrical output from the sensor. This study provides a novel method for handling the transport and storage of large tactile data and will trigger advances towards memorable e-skin.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Dahiya, Professor Ravinder and Yogeswaran, Mr Nivasan and Gregory, Professor Duncan and Liu, Mr Fengyuan
Authors: Liu, F., Taube, W., Yogeswaran, N., Gregory, D., and Dahiya, R.
College/School:College of Science and Engineering > School of Chemistry
College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG