Adamu-Lema, F., Duan, M. , Berrada, S., Lee, J., Al-Ameri, T. , Georgiev, V. and Asenov, A. (2017) Modelling and simulation of advanced semiconductor devices. ECS Transactions, 80(4), pp. 33-42. (doi: 10.1149/08004.0033ecst)
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Publisher's URL: http://dx.doi.org/10.1149/08004.0033ecst
Abstract
This paper presents a modelling and simulation study of advanced semiconductor devices. Different Technology Computer Aided Design approaches and models, used in nowadays research are described here. Our discussions are based on numerous theoretical approaches starting from first principle methods and continuing with discussions based on more well stablished methods such as Drift-Diffusion, Monte Carlo and Non-Equilibrium Green’s Function formalism.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Lee, Mr Jaehyun and Duan, Dr Meng and Georgiev, Professor Vihar and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Berrada, Dr Salim and Adamu-Lema, Dr Fikru |
Authors: | Adamu-Lema, F., Duan, M., Berrada, S., Lee, J., Al-Ameri, T., Georgiev, V., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | ECS Transactions |
Publisher: | Electrochemical Society |
ISSN: | 1938-5862 |
ISSN (Online): | 1938-6737 |
Copyright Holders: | Copyright © 2018 The Electrochemical Society |
First Published: | First published in ECS Transactions 80(4):33-42 |
Publisher Policy: | Reproduced in accordance with the copyright policy of the publisher |
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