Pure Zincblende Ga(As,P) Nanowires Grown by Ga-assisted Chemical Beam Epitaxy

Garcia Nunez, C. , Braña, A.F., Pau, J.L., Ghita, D., García, B.J., Shen, G., Wilbert, D.S., Kim, S.M. and Kung, P. (2013) Pure Zincblende Ga(As,P) Nanowires Grown by Ga-assisted Chemical Beam Epitaxy. 17th European Molecular Beam Epitaxy (E-MBE), Levi, Finlance, 10-13 Mar 2013. pp. 205-212.

Abstract

GaAs nanowires (NWs) were grown by Ga-assisted chemical beam epitaxy on Si(111) substrates covered by a thin oxide layer using different substrate temperatures and growth times. Ga droplet terminated NWs with hexagonal footprint and cross section were observed by scanning electron microscopy, with diameters and lengths in the range of 40–65 nm and 0.3–1.2 µm, respectively. Transmission electron microscopy (TEM) images show evidences of vapor–liquid–solid growth mechanisms which lead to different droplet-nanowire interface quality depending on Ga-catalyst wetting area of NW sidewalls. TEM and Raman spectroscopy demonstrates the existence of a single zincblende phase in the NW body, without any evidence of wurtzite phase domains.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Garcia Nunez, Dr Carlos
• Authors: Garcia Nunez, C., Braña, A.F., Pau, J.L., Ghita, D., García, B.J., Shen, G., Wilbert, D.S., Kim, S.M., and Kung, P.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Crystal Growth
• Publisher: Elsevier B.V.
• ISSN (Online): 1873-5002