Bending Effects in a Flexible Dual Gated Graphene FET: A Verilog-A Model Implementation

Yogeswaran, N., Tang, Z., Vinciguerra, V. and Dahiya, R. (2017) Bending Effects in a Flexible Dual Gated Graphene FET: A Verilog-A Model Implementation. In: 2017 European Conference on Circuit Theory and Design, ECCTD 2017, Catalina, Italy, 04-06 September 2017, ISBN 9781538639740 (doi: 10.1109/ECCTD.2017.8093275)

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Abstract

This paper presents the Verilog-A implementation of charge control based model of dual gated graphene field effect transistor (GFET) and initial results towards bending induced changes in their electrical response. The ambipolar region of the device has been described using the saturation and displacement current models. The output characteristics derived from Verilog - A simulation is in good agreement with the reported experimental results. The model has been extended to study the behaviour of a bendable GFET and the simulation indicates negligible change in the electrical properties in the test range of bending.

Item Type:Conference Proceedings
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Yogeswaran, Mr Nivasan and Dahiya, Professor Ravinder
Authors: Yogeswaran, N., Tang, Z., Vinciguerra, V., and Dahiya, R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
ISSN:2474-9672
ISBN:9781538639740

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
663861Engineering Fellowships for Growth: Printed Tactile SKINRavinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002527/1ENG - ENGINEERING ELECTRONICS & NANO ENG
659051Flexible Electronics Device Modelling (FLEXELDEMO)Ravinder DahiyaEngineering and Physical Sciences Research Council (EPSRC)EP/M002519/1ENG - ENGINEERING ELECTRONICS & NANO ENG