Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Pandey, R. R., Chen, R., Asenov, A. and Todri-Sanial, A. (2018) Atomistic to circuit-level modeling of doped SWCNT for on-chip interconnects. IEEE Transactions on Nanotechnology, 17(6), pp. 1084-1088. (doi: 10.1109/TNANO.2018.2802320)

157009.pdf - Accepted Version



In this article, we present a hierarchical model for doped single-wall carbon nanotube (SWCNT) for on-chip interconnect application. We study the realistic CVD grown SWCNT with defects and contacts, which induce important resistance values and worsens SWCNT on-chip interconnect performance. We investigate the fundamental physical mechanism of doping in SWCNT with the purpose of improving its electrical conductivity as well as combining mitigating the effects of defects and large contact resistance. The atomistic model provides insights on statistical variations of the number of conducting channels of doped SWCNT and SWCNT resistance variation with a various number of vacancy defects configurations. Based on atomistic simulations, we develop circuit-level models to simulate SWCNT interconnects and understand the impact of doping, defects, and contacts. Simulation results show an 80% resistance reduction by doping. Additionally, we observe that doping can mitigate the effects of defects and limited impact on contact resistance.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar
Authors: Liang, J., Lee, J., Berrada, S., Georgiev, V., Pandey, R. R., Chen, R., Asenov, A., and Todri-Sanial, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Nanotechnology
ISSN (Online):1941-0085
Published Online:05 February 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Transactions on Nanotechnology 17(6): 1084-1088
Publisher Policy:Reproduced in accordance with the publisher copyright policy

University Staff: Request a correction | Enlighten Editors: Update this record

Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG