Cornescu, A., Wang, J., Al-Khalidi, A. , Morariu, R. and Wasige, E. (2017) IV Characteristics of a Stabilized Resonant Tunnelling Diodes. CSW 2017, Berlin, Germany, 14-18 May 2017.
|
Text
156289.pdf - Accepted Version 543kB |
Abstract
The presence of parasitic oscillations found in the negative differential region (NDR), which can distort the current-voltage (I-V) characteristics of the device is one of the main problems when designing resonant tunnelling diode (RTD) circuits. A new method for RTD stabilization is proposed based on work done previously on tunnel diodes and results show that there is a significant difference between the I-V characteristics of a tunnel diode and that of an RTD. This work shows promising potential for further increasing the RTD’s output power, DC-RF conversion efficiency and provides the basis for an accurate model of the NDR region
Item Type: | Conference or Workshop Item |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Wasige, Professor Edward and Morariu, Razvan and Wang, Dr Jue and Cornescu, Andrei and Al-Khalidi, Dr Abdullah |
Authors: | Cornescu, A., Wang, J., Al-Khalidi, A., Morariu, R., and Wasige, E. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Copyright Holders: | Copyright © 2017 The Authors |
Publisher Policy: | Reproduced with the permission of the Authors |
Related URLs: |
University Staff: Request a correction | Enlighten Editors: Update this record