Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters

Baba, R., Stevens, B. J., Mukai, T. and Hogg, R. A. (2018) Epitaxial designs for maximizing efficiency in resonant tunnelling diode based terahertz emitters. IEEE Journal of Quantum Electronics, 54(2), 8500211. (doi: 10.1109/JQE.2018.2797960)

155951.pdf - Accepted Version



We discuss the modelling of high current density InGaAs/AlAs/InP resonant tunneling diodes to maximize their efficiency as THz emitters. A figure of merit which contributes to the wall plug efficiency, the intrinsic resonator efficiency, is used for the development of epitaxial designs. With the contribution of key parameters identified, we analyze the limitations of accumulated stress to assess the manufacturability of such designs. Optimal epitaxial designs are revealed, utilizing thin barriers, with a wide and shallow quantum well that satisfies the strained layer epitaxy constraint. We then assess the advantages to epitaxial perfection and electrical characteristics provided by devices with a narrow InAs sub-well inside a lattice-matched InGaAs alloy. These new structures will assist in the realization of the next-generation submillimeter emitters.

Item Type:Articles
Additional Information:This work was supported by the Engineering and Physical Sciences Research Council grants EP/503812/1 and EP/L505055/1 DTA studentship, as well the European Commission Horizon 2020 iBROW project 645369, with additional funding from The University of Glasgow to support an internship at ROHM Co., Ltd.
Glasgow Author(s) Enlighten ID:Hogg, Professor Richard and Baba, Mr Razvan
Authors: Baba, R., Stevens, B. J., Mukai, T., and Hogg, R. A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Journal of Quantum Electronics
ISSN (Online):1558-1713
Published Online:25 January 2018
Copyright Holders:Copyright © 2018 IEEE
First Published:First published in IEEE Journal of Quantum Electronics 54(2):8500211
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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