AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics

Al-Khalidi, A. , Taking, S. and Wasige, E. (2012) AlN/GaN HEMTs with SiN Passivation and Recessed Ohmics. 6th Wide Band Gap Semiconductors and Components Workshop, Noordwijk, Netherlands, 8-9 Oct 2012.

Abstract

We report the fabrication of good performing SiN/AlN/GaN MIS-HEMT devices with maximum drain current density, IDS, of 1.9A/mm. Compared to the same devices on SiN/AlGaN/GaN MIS-HEMT structure, these have superior performance. This is achieved by recessing the Ohmic contacts to lower the contact resistance. These devices employ a 10nm PECVD deposited SiN dielectric layer under the gate to reduce the leakage current. This paper will compare the DC performance of AlGaN/GaN and AlN/GaN HEMTs employing SiN passivation and recessed Ohmic contacts. We will also comment on the performance of RF devices on AlGaN/GaN material.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Al-Khalidi, Dr Abdullah
• Authors: Al-Khalidi, A., Taking, S., and Wasige, E.
• Subjects: T Technology > TK Electrical engineering. Electronics Nuclear engineering
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering