Al-Ameri, T. (2018) Correlation between the golden ratio and nanowire transistor performance. Applied Sciences, 8(1), 54. (doi: 10.3390/app8010054)
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Abstract
An observation was made in this research regarding the fact that the signatures of isotropic charge distributions in silicon nanowire transistors (NWT) displayed identical characteristics to the golden ratio (Phi). In turn, a simulation was conducted regarding ultra-scaled n-type Si (NWT) with respect to the 5-nm complementary metal-oxide-semiconductor (CMOS) application. The results reveal that the amount of mobile charge in the channel and intrinsic speed of the device are determined by the device geometry and could also be correlated to the golden ratio (Phi). This paper highlights the issue that the optimization of NWT geometry could reduce the impact of the main sources of statistical variability on the Figure of Merit (FoM) of devices. In the context of industrial early successes in fabricating vertically stacked NWT, ensemble Monte Carlo (MC) simulations with quantum correction are used to accurately predict the drive current. This occurs alongside a consideration of the degree to which the carrier transport in the vertically stacked lateral NWTs are complex.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Al-Ameri, Talib Mahmood Ali |
| Authors: | Al-Ameri, T. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Applied Sciences |
| Publisher: | MDPI |
| ISSN: | 2076-3417 |
| ISSN (Online): | 2076-3417 |
| Published Online: | 02 January 2018 |
| Copyright Holders: | Copyright © 2018 the Author |
| First Published: | First published in Applied Sciences 8(1):54 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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