Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

Frigerio, J. et al. (2017) Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing. Journal of Physics D: Applied Physics, 50(46), 465103. (doi: 10.1088/1361-6463/aa8eca)

152046.pdf - Accepted Version



High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm−3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm−3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Item Type:Articles
Additional Information:The research leading to these results has received funding from the European Union’s Seventh Framework Programme under grant agreement no. 613055.
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and Gallacher, Dr Kevin
Authors: Frigerio, J., Ballabio, A., Gallacher, K., Gilberti, V., Baldassarre, L., Millar, R., Milazzo, R., Maiolo, L., Minotti, A., Bottegoni, F., Biagioni, P., Paul, D., Ortolani, M., Pecora, A., Napolitani, E., and Isella, G.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Journal of Physics D: Applied Physics
Publisher:IOP Publishing
ISSN (Online):1361-6463
Copyright Holders:Copyright © 2017 IOP Publishing Ltd.
First Published:First published in Journal of Physics D: Applied Physics 50(46):465103
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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