Magnetization reversal of exchange bias double layers magnetically patterned by ion irradiation

Fassbender, J. et al. (2002) Magnetization reversal of exchange bias double layers magnetically patterned by ion irradiation. Physica Status Solidi A, 189(2), 439 -447. (doi: 10.1002/1521-396X(200202)189:2<439::AID-PSSA439>3.0.CO;2-4)

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Abstract

He<sup>+</sup>ion irradiation is an excellent tool to modify the magnitude and direction of the exchange bias field on the sub- micrometer scale without affecting the sample topography. This effect has been utilized to magnetically pattern NiFe/FeMn exchange bias double layers using resist masks patterned by electron beam lithography. Ion irradiation through the masks leads to a local modification of the magnetization reversal behavior and allows to study the magnetization reversal as a function of the exchange bias field strength and the pattern dimensions on a single sample. Results are presented on the macroscopic and microscopic magnetization reversal using the magneto-optic Kerr effect and Lorentz microscopy.

Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kirk, Dr Katherine
Authors: Fassbender, J., Poppe, S., Mewes, T., Mougin, A., Hillebrands, B., Engel, D., Jung, M., Ehresmann, A., Schmoranzer, H., Faini, G., Kirk, K.J., and Chapman, J.N.
Subjects:Q Science > QC Physics
College/School:College of Science and Engineering > School of Physics and Astronomy
Journal Name:Physica Status Solidi A
ISSN:0031-8965

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