Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors

Berrada, S., Lee, J., Georgiev, V. and Asenov, A. (2017) Effect of the Quantum Mechanical Tunneling on the Leakage Current in Ultra-scaled Si Nanowire Transistors. 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017.

Abstract

No abstract available.

• Item Type: Conference or Workshop Item
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar
• Authors: Berrada, S., Lee, J., Georgiev, V., and Asenov, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering

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