Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application

Liang, J., Lee, J., Berrada, S., Georgiev, V. , Asenov, A. , Azemard-Crestani, A. and Todri-Sanial, A. (2018) Atomistic to Circuit Level Modeling of Defective Doped SWCNTs with Contacts for On-Chip Interconnect Application. In: 12th IEEE Nanotechnology Materials and Devices Conference (NMDC 2017), Singapore, 2-4 Oct 2017, pp. 66-67. ISBN 9781538627723 (doi: 10.1109/NMDC.2017.8350506)

Abstract

Carbon nanotubes (CNTs) due to their high electrical/thermal conductivity, high ampacity, high tolerance to electro-migration [1] and small dimensions make them an ideal candidate for future on-chip interconnects [2]. Fabricating the CNTs, random chirality and some defects are introduced which can degrade the CNT electrical properties [3]. Additionally, the contact resistance between metal and CNT presents additional parasitics that impose restraints on the electron transport. Electrical models of CNT for interconnect application were developed several years ago [4-5]. In this paper, we explored on doped and defective single-wall CNTs (SWCNT (24,0)) including contact resistance as important physical parameters to assess the performance of fabricated SWCNTs realistically for back-end-of-line (BEOL) on-chip interconnects on VLSI circuit application.

• Item Type: Conference Proceedings
• Additional Information: Authors would like to thank H2020 CONNECT European project. This project has received funding from the European Union’s Horizon 2020 research and innovation program under grant agreement No 688612.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar
• Authors: Liang, J., Lee, J., Berrada, S., Georgiev, V., Asenov, A., Azemard-Crestani, A., and Todri-Sanial, A.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISBN: 9781538627723
• Published Online: 30 April 2018
• Copyright Holders: Copyright © 2017 IEEE
• First Published: First published in 2017 IEEE 12th Nanotechnology Materials and Devices Conference (NMDC): 66-67
• Publisher Policy: Reproduced in accordance with the publisher copyright policy

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
70189	1	CONNECT	Asen Asenov	European Commission (EC)	688612	ENG - ENGINEERING ELECTRONICS & NANO ENG