CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays

Escorcia Carranza, I. , Grant, J. , Gough, J. and Cumming, D. R.S. (2017) CMOS Terahertz Metamaterial Based 64 × 64 Bolometric Detector Arrays. In: 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz), Cancun, Mexico, 27 Aug - 01 Sep 2017, ISBN 9781509060504 (doi: 10.1109/IRMMW-THz.2017.8067138)

Abstract

We present two terahertz detectors composed of microbolometer sensors (vanadium oxide and silicon pn diode) and metamaterial absorbers monolithically integrated into a complementary metal oxide semiconductor (CMOS) process. The metamaterial absorbers were created using the metal-dielectric-metal layers of a commercial CMOS technology resulting in low-cost terahertz detectors. The scalability of this technology was used to form a 64 × 64 pixel terahertz focal plane array.

• Item Type: Conference Proceedings
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Cumming, Professor David and Gough, Mr John and Grant, Dr James and Escorcia Carranza, Dr Ivonne
• Authors: Escorcia Carranza, I., Grant, J., Gough, J., and Cumming, D. R.S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: Microsystem Technology Group
• ISSN: 2162-2035
• ISBN: 9781509060504
• Published Online: 16 October 2017
• Copyright Holders: Copyright © 2017 IEEE
• First Published: First published in 2017 42nd International Conference on Infrared, Millimeter, and Terahertz Waves (IRMMW-THz)
• Publisher Policy: Reproduced in accordance with the publisher copyright policy