n-Ge on Si for Mid-Infrared Plasmonic Sensors

Paul, D. J. et al. (2017) n-Ge on Si for Mid-Infrared Plasmonic Sensors. In: IEEE Photonics Society Summer Topical Meeting Series (SUM 2017), San Juan, Puerto Rico, 10-12 Jul 2017, pp. 125-126. ISBN 9781509065714 (doi: 10.1109/PHOSST.2017.8012682)

150006.pdf - Accepted Version



The detection and amplification of molecular absorption lines from a mustard gas simulant is demonstrated using plasmonic antennas fabricated from n-Ge epitaxially grown on Si. Approaches to integrated sensors will be presented along with a review of n-Ge compared to other mid-infrared plasmonic materials.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Millar, Dr Ross and Paul, Professor Douglas and Gallacher, Dr Kevin
Authors: Paul, D. J., Gallacher, K., Millar, R. W., Giliberti, V., Calandrini, E., Baldassarre, L., Fischer, M. P., Frigerio, J., Ballabio, A., Sakat, E., Pellegrini, G., Brida, D., Isella, G., Ortolani, M., and Biagioni, P.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 IEEE
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
634451GEMINIDouglas PaulEuropean Commission (EC)613055ENG - ENGINEERING ELECTRONICS & NANO ENG