Resonant tunnelling diode based high speed optoelectronic transmitters

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi: 10.1117/12.2276350)

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Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

Item Type:Conference Proceedings
Additional Information:This work was supported by European Commission, grant agreement no. 645369 (iBROW project).
Glasgow Author(s) Enlighten ID:Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Wang, Dr Jue
Authors: Wang, J., Rodrigues, G. C., Al-Khalidi, A., Figueiredo, J. M.L., and Wasige, E.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 SPIE
First Published:First published in Proceedings of SPIE 10453: 104532Y
Publisher Policy:Reproduced in accordance with the publisher copyright policy

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