Resonant tunnelling diode based high speed optoelectronic transmitters

Wang, J., Rodrigues, G. C., Al-Khalidi, A. , Figueiredo, J. M.L. and Wasige, E. (2017) Resonant tunnelling diode based high speed optoelectronic transmitters. In: Third International Conference on Applications of Optics and Photonics, Faro, Portugal, 08-12 May 2017, 104532Y. (doi: 10.1117/12.2276350)

Abstract

Resonant tunneling diode (RTD) integration with photo detector (PD) from epi-layer design shows great potential for combining terahertz (THz) RTD electronic source with high speed optical modulation. With an optimized layer structure, the RTD-PD presented in the paper shows high stationary responsivity of 5 A/W at 1310 nm wavelength. High power microwave/mm-wave RTD-PD optoelectronic oscillators are proposed. The circuitry employs two RTD-PD devices in parallel. The oscillation frequencies range from 20-44 GHz with maximum attainable power about 1 mW at 34/37/44GHz.

• Item Type: Conference Proceedings
• Additional Information: This work was supported by European Commission, grant agreement no. 645369 (iBROW project).
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Al-Khalidi, Dr Abdullah and Wang, Dr Jue
• Authors: Wang, J., Rodrigues, G. C., Al-Khalidi, A., Figueiredo, J. M.L., and Wasige, E.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• ISSN: 0277-786X
• Copyright Holders: Copyright © 2017 SPIE
• First Published: First published in Proceedings of SPIE 10453: 104532Y
• Publisher Policy: Reproduced in accordance with the publisher copyright policy