InGaN/GaN laser diodes with high order notched gratings

Slight, T. J., Yadav, A., Odedina, O., Meredith, W., Docherty, K. E., Rafailov, E. and Kelly, A. E. (2017) InGaN/GaN laser diodes with high order notched gratings. IEEE Photonics Technology Letters, 29(23), pp. 2020-2022. (doi: 10.1109/LPT.2017.2759903)

Abstract

We report on InGaN/GaN distributed feedback laser diodes with high order gratings emitting at a single wavelength around 428 nm. The 39th order notched gratings have the advantage of a simplified fabrication route with no need for overgrowth. The laser ridge and grating were formed by electron beam lithography followed by ICP etching. The as-cleaved lasers emitted in the pulsed regime with a peak single-mode output power of 15 mW. Optimization of the grating design should lead to higher power single wavelength operation.

• Item Type: Articles
• Additional Information: This work was supported by the European Union FP7 project Edocald (project number 605254). Additional support was received through the UK SU2P pilot programme.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Odedina, Opeoluwa and Docherty, Mr Kevin and Kelly, Professor Anthony
• Authors: Slight, T. J., Yadav, A., Odedina, O., Meredith, W., Docherty, K. E., Rafailov, E., and Kelly, A. E.
• College/School: College of Science and Engineering > School of Engineering; College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Photonics Technology Letters
• Publisher: IEEE
• ISSN: 1041-1135
• ISSN (Online): 1941-0174
• Published Online: 05 October 2017
• Copyright Holders: Copyright © 2017 IEEE
• First Published: First published in IEEE Photonics Technology Letters 29(23): 2020-2022
• Publisher Policy: Reproduced in accordance with the copyright policy of the publisher.