Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks

Millar, R.W. , Dumas, D.C.S., Gallacher, K.F. , Jahandar, P., MacGregor, C., Myronov, M. and Paul, D.J. (2017) Mid-infrared light emission > 3 µm wavelength from tensile strained GeSn microdisks. Optics Express, 25(21), pp. 25374-25385. (doi: 10.1364/OE.25.025374) (PMID:29041205)

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GeSn alloys with Sn contents of 8.4 % and 10.7 % are grown pseudomorphically on Ge buffers on Si (001) substrates. The alloys as-grown are compressively strained, and therefore indirect bandgap. Undercut GeSn on Ge microdisk structures are fabricated and strained by silicon nitride stressor layers, which leads to tensile strain in the alloys, and direct bandgap photoluminescence in the 3–5 µm gas sensing window of the electromagnetic spectrum. The use of pseudomorphic layers and external stress mitigates the need for plastic deformation to obtain direct bandgap alloys. It is demonstrated, that the optically pumped light emission overlaps with the methane absorption lines, suggesting that GeSn alloys are well suited for mid-infrared integrated gas sensors on Si chips.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Paul, Professor Douglas and Millar, Dr Ross and Dumas, Dr Derek and Gallacher, Dr Kevin
Authors: Millar, R.W., Dumas, D.C.S., Gallacher, K.F., Jahandar, P., MacGregor, C., Myronov, M., and Paul, D.J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Optics Express
Publisher:Optical Society of America
ISSN (Online):1094-4087
Published Online:05 October 2017
Copyright Holders:Copyright © 2017 Optical Society of America
First Published:First published in 25(21):25374-25385
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
694301Engineering Quantum Technology Systems on a Silicon PlatformDouglas PaulEngineering and Physical Sciences Research Council (EPSRC)EP/N003225/1ENG - ENGINEERING ELECTRONICS & NANO ENG