Brown, A.R., Watling, J.R. and Asenov, A. (2002) A 3-D atomistic study of archetypal double gate MOSFET structures. Journal of Computational Electronics, 1(1-2), pp. 165-169. (doi: 10.1023/A:1020704919992)
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Abstract
The double gate MOSFET architecture has been proposed as a possible solution to allow the scaling of MOSFETs to the sub-30 nm regime, particularly due to its inherent resistance to short-channel effects. The use of lightly doped, or even undoped, channels means that such devices should be inherently resistant to random dopant induced fluctuations which will be one of the major obstacles to MOSFET scaling towards the end of the Si Roadmap. Random dopants within the channel are not, however, the only source of intrinsic fluctuations within MOSFETs at this scale. In this paper we investigate the impact of discrete dopants in the source and drain, individual charges within the active region and line edge roughness on the intrinsic parameter fluctuations in double gate MOSFETs.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Brown, Mr Andrew and Watling, Dr Jeremy and Asenov, Professor Asen |
| Authors: | Brown, A.R., Watling, J.R., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Computational Electronics |
| ISSN: | 1569-8025 |
| ISSN (Online): | 1572-8137 |
| Published Online: | 02 November 2004 |
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