Watling, J. (2003) Degeneracy and high doping effects in deep sub-micron relaxed and strained SiGe MOSFETs. Journal of Computational Electronics, 2(39540), pp. 475-479.
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy |
| Authors: | Watling, J. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Journal of Computational Electronics |
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