Watling, J. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, B89(39508), pp. 444-448.
Full text not currently available from Enlighten.
Item Type: | Articles |
---|---|
Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Watling, Dr Jeremy |
Authors: | Watling, J. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Materials Science and Engineering B: Solid-State Materials for Advanced Technology |
University Staff: Request a correction | Enlighten Editors: Update this record