Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs

Watling, J. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si/sub 0.64/Ge/sub 0.36//Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, B89(39508), pp. 444-448.

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Watling, Dr Jeremy
Authors: Watling, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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