Gate tunnelling and impact ionisation in sub 100nm PHEMTs

Kalna, K. (2003) Gate tunnelling and impact ionisation in sub 100nm PHEMTs. Institute of Electronics, Information and Communication Engineers Ieice Transactions on Electronics, E86-C(3), pp. 330-335.

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Kalna, Dr Karol
Authors: Kalna, K.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Institute of Electronics, Information and Communication Engineers Ieice Transactions on Electronics

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