Al-Ameri, T. , Georgiev, V.P. , Adamu-Lema, F. and Asenov, A. (2017) Simulation study of vertically stacked lateral Si nanowires transistors for 5 nm CMOS applications. IEEE Journal of the Electron Devices Society, 5(6), pp. 466-472. (doi: 10.1109/JEDS.2017.2752465)
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Abstract
In this paper we present a simulation study of vertically stacked lateral nanowires transistors (NWTs), which may have applications at 5nm CMOS technology. Our simulation approach is based on a collection of simulation techniques to capture the complexity in such ultra-scaled devices. Initially, we used drift-diffusion methodology with activated Poisson-Schrodinger quantum corrections to accurately capture the quantum confinement in the cross-section of the device. Ensemble Monte Carlo simulations are used to accurately evaluate the drive current capturing the complexity of the carrier transport in the NWTs. We compared the current flow in single, double, and triple vertically stacked lateral NWTs with and without contact resistance. The results presented here suggest a consistent link between channel strain and device performance. Furthermore, we propose a device structure for the 5nm CMOS technology node that meets the required industry scaling projection. We also consider the interplay between various sources of statistical variability and reliability in this work.
| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Georgiev, Professor Vihar and Asenov, Professor Asen and Al-Ameri, Talib Mahmood Ali and Adamu-Lema, Dr Fikru |
| Authors: | Al-Ameri, T., Georgiev, V.P., Adamu-Lema, F., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Journal of the Electron Devices Society |
| Publisher: | IEEE |
| ISSN: | 2168-6734 |
| ISSN (Online): | 2168-6734 |
| Published Online: | 19 September 2017 |
| Copyright Holders: | Copyright © 2017 The Authors |
| First Published: | First published in IEEE Journal of the Electron Devices Society 5(6):466-472 |
| Publisher Policy: | Reproduced under a Creative Commons License |
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