Characterizing bandgap gratings in GaAs: AlAs superlattice structures using interface phonons

Scrutton, P., Sorel, M. , Hutchings, D.C. , Aitchison, J.S. and Helmy, A.S. (2007) Characterizing bandgap gratings in GaAs: AlAs superlattice structures using interface phonons. IEEE Photonics Technology Letters, 19, pp. 677-679. (doi: 10.1109/LPT.2007.894985)

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Interface Raman modes were used to study quantum-well intermixing in GaAs : AlAs superlattice (SL) structures using room-temperature spatially resolved Raman spectroscopy. The intermixing was observed to degrade the interface mode intensity, which can be used as a sensitive indicator of the SL quality. This feature, along with spatially resolved photoluminescence, was used to investigate bandgap modulation in periodically intermixed bandgap gratings, fabricated using implantation induced disordering. Using interface modes instead of bulk-like modes is a promising avenue for characterizing SL structures that rely on intricate bandgap features

Item Type:Articles
Glasgow Author(s) Enlighten ID:Hutchings, Professor David and Sorel, Professor Marc
Authors: Scrutton, P., Sorel, M., Hutchings, D.C., Aitchison, J.S., and Helmy, A.S.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1941-0174
Published Online:10 April 2007

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
427901Integrated self-pumped optical frequency conversion and generation in semiconductor waveguidesDavid HutchingsEngineering & Physical Sciences Research Council (EPSRC)EP/E009972/1ENG - ENGINEERING ELECTRONICS & NANO ENG