Goldberg, G. R., Boldin, A., Andersson, S. M.L., Ivanov, P., Ozaki, N., Taylor, R. J.E., Childs, D. T.D. , Groom, K. M., Kennedy, K. L. and Hogg, R. A. (2017) Gallium nitride superluminescent light emitting diodes for optical coherence tomography applications. IEEE Journal of Selected Topics in Quantum Electronics, 23(6), pp. 1-11. (doi: 10.1109/JSTQE.2017.2732941)
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147516.pdf - Accepted Version 3MB |
Abstract
Optical coherence tomography (OCT) exploits the coherent properties of light to permit noninvasive and in situ imaging of biological tissues. By expanding the range of OCT light sources from the traditional telecoms wavelengths to include ∼400 nm gallium nitride (GaN) based superluminescent light emitting diodes (SLEDs) subcellular axial and lateral resolution could be achieved, provided enhanced bandwidth is also achieved. Due to the focus on high-power applications for GaN SLEDs, there has been limited work on increasing the source bandwidth. In this paper, we demonstrate for the first time a ∼400 nm GaN SLED with >10 nm bandwidth employed within an OCT system, where an axial resolution of ∼7 μm is achieved. Bespoke GaN SLEDs suggest that <4 μm axial resolution imaging is imminent for short wavelength devices.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Ivanov, Dr Pavlo and Taylor, Dr Richard and Andersson, Sia and Goldberg, Graham and Hogg, Professor Richard and Boldin, Aleksandr and Childs, Dr David |
Authors: | Goldberg, G. R., Boldin, A., Andersson, S. M.L., Ivanov, P., Ozaki, N., Taylor, R. J.E., Childs, D. T.D., Groom, K. M., Kennedy, K. L., and Hogg, R. A. |
College/School: | College of Science and Engineering > School of Engineering College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Journal of Selected Topics in Quantum Electronics |
Publisher: | IEEE |
ISSN: | 1077-260X |
ISSN (Online): | 1558-4542 |
Published Online: | 27 July 2017 |
Copyright Holders: | Copyright © 2017 IEEE |
First Published: | First published in IEEE Journal of Selected Topics in Quantum Electronics 23(6): 1-11 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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