Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C. and Thayne, I. (2004) Self-aligned T-gate InPHEMT realisation through double delta doping and a non-annealed ohmic process. Microelectronic Engineering, 73-4, pp. 814-817. (doi: 10.1016/j.mee.2004.03.057)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled |
| Authors: | Moran, D., Boyd, E., Elgaid, K., McEwan, F., McLelland, H., Stanley, C., and Thayne, I. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Microelectronic Engineering |
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