The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations

Lee, J. et al. (2017) The Impact of Vacancy Defects on CNT Interconnects: From Statistical Atomistic Study to Circuit Simulations. In: SISPAD 2017: International Conference on Simulation of Semiconductor Processes and Devices, Kamakura, Japan, 7-9 Sept 2017, pp. 157-160. (doi: 10.23919/SISPAD.2017.8085288)

147284.pdf - Accepted Version



We have performed statistical atomistic simulations with tight-binding approach to investigate the effects of randomly distributed mono-vacancy defects in metallic single-walled carbon nanotube (SWCNT) interconnects. We also extracted defective resistances from the atomistic simulations and performed circuitlevel simulations to compare the performance of interconnects with and without defects. We have found that the defects induce significant fluctuations of SWCNT resistance with a median value showing an Ohmic-like behaviour. Fortunately, the resistance depends only on the diameter of SWCNTs and not on their chirality. Moreover, our circuit simulations show that the defective resistance induces important propagation time delay ratio that should be accounted for when designing CNT interconnects.

Item Type:Conference Proceedings
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Lee, Mr Jaehyun and Berrada, Dr Salim and Georgiev, Professor Vihar and Sadi, Dr Toufik
Authors: Lee, J., Berrada, S., Liang, J., Sadi, T., Georgiev, V. P., Todri-Sanial, A., Kalita, D., Ramos, R., Okuno, H., Dijon, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Copyright Holders:Copyright © 2017 The Japan Society of Applied Physics
Publisher Policy:Reproduced in accordance with the copyright policy of the publisher
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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
701891CONNECTAsen AsenovEuropean Commission (EC)688612ENG - ENGINEERING ELECTRONICS & NANO ENG