Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques

Sun, H.D. et al. (2003) Selective modification of the band gaps of GaInNas/GaAs structures by quantum well intermixing techniques. Materials Science and Engineering C: Biomimetic and Supramolecular Systems, 23, pp. 983-987. (doi: 10.1016/j.msec.2003.09.071)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Bryce, Prof Ann
Authors: Sun, H.D., Macaluso, R., Calvez, S., Dawson, M.D., Robert, F., Bryce, A.C., Marsh, J.H., Riechert, H., Gilet, P., Grenouillet, L., and Million, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science and Engineering C: Biomimetic and Supramolecular Systems

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