Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs

Prest, M.J. et al. (2002) Transconductance, carrier mobility and 1/f noise in Si/Si0.64Ge0.36/Si pMOSFETs. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 89, pp. 444-448.

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Prest, M.J., Palmer, M.J., Grasby, T.J., Phillips, P.J., Mironov, O.A., Parker, E.H.C., Whall, T.E., Waite, A.M., Evans, A.G.R., Watling, J.R., Asenov, A., and Barker, J.R.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Materials Science and Engineering B: Solid-State Materials for Advanced Technology

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