Hou, L. , Tan, M., Haji, M., Eddie, I. and Marsh, J. H. (2013) EML based on side-wall grating and identical epitaxial layer scheme. IEEE Photonics Technology Letters, 25(12), pp. 1169-1172. (doi: 10.1109/LPT.2013.2261809)
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Abstract
We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is −2 V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Marsh, Professor John and Haji, Dr Mohsin and Hou, Dr Lianping |
Authors: | Hou, L., Tan, M., Haji, M., Eddie, I., and Marsh, J. H. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | IEEE Photonics Technology Letters |
Publisher: | Institute of Electrical and Electronics Engineers |
ISSN: | 1041-1135 |
ISSN (Online): | 1941-0174 |
Published Online: | 07 May 2013 |
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