EML based on side-wall grating and identical epitaxial layer scheme

Hou, L. , Tan, M., Haji, M., Eddie, I. and Marsh, J. H. (2013) EML based on side-wall grating and identical epitaxial layer scheme. IEEE Photonics Technology Letters, 25(12), pp. 1169-1172. (doi: 10.1109/LPT.2013.2261809)

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We, for the first time, present electroabsorption modulator lasers based on side-wall gratings and the identical epitaxial layer scheme using very simple fabrication processes. The devices show stable single-mode operation with little mode-hopping and a side mode suppression ratio of more than 45 dB, which is maintained until the applied current exceeds 6 times that of the threshold value. The drive voltage required to obtain a 12-dB extinction ratio is −2 V. The devices can be operated with a 3-dB bandwidth of 7 GHz allowing for error-free large signal modulation at 5 Gb/s with a dynamic extinction ratio of 11 dB.

Item Type:Articles
Glasgow Author(s) Enlighten ID:Marsh, Professor John and Haji, Dr Mohsin and Hou, Dr Lianping
Authors: Hou, L., Tan, M., Haji, M., Eddie, I., and Marsh, J. H.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Photonics Technology Letters
Publisher:Institute of Electrical and Electronics Engineers
ISSN (Online):1941-0174
Published Online:07 May 2013

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