3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs

Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S. and Asenov, A. (2007) 3-D Monte Carlo simulation of the impact of quantum confinement scattering on the magnitude of current fluctuations in double gate MOSFETs. IEEE Transactions on Nanotechnology, 6, pp. 48-55. (doi: 10.1109/TNANO.2006.886739)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott
Authors: Riddet, C., Brown, A.R., Alexander, C.L., Watling, J.R., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:IEEE Transactions on Nanotechnology
ISSN:1536-125X

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Project CodeAward NoProject NamePrincipal InvestigatorFunder's NameFunder RefLead Dept
379901Statistical 3d simulation of intrinsic parameter fluctuations in decanoneter MOSFETS introduced by discreteness of charge and matterAsen AsenovEngineering & Physical Sciences Research Council (EPSRC)GR/T18271/01Electronic and Nanoscale Engineering