An active interferometric method for extreme impedance on-wafer device measurements

Votsi, H., Li, C. , Aaen, P. H. and Ridler, N. M. (2017) An active interferometric method for extreme impedance on-wafer device measurements. IEEE Microwave and Wireless Components Letters, 27(11), pp. 1034-1036. (doi: 10.1109/LMWC.2017.2750086)

Abstract

Nano-scale devices and high-power transistors present extreme impedances, which are far removed from the 50-Ω reference impedance of conventional test equipment, resulting in a reduction in the measurement sensitivity as compared with impedances close to the reference impedance. This letter describes a novel method based on active interferometry to increase the measurement sensitivity of a vector network analyzer for measuring such extreme impedances, using only a single coupler. The theory of the method is explained with supporting simulation. An interferometry-based method is demonstrated for the first time with on-wafer measurements, resulting in an improved measurement sensitivity for extreme impedance device characterization of up to 9%.

• Item Type: Articles
• Additional Information: This work was supported by the Research Project 14IND02 PlanarCal EMPIR and the EPSRC under Grant EP/L02263X/1.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Li, Professor Chong
• Authors: Votsi, H., Li, C., Aaen, P. H., and Ridler, N. M.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: IEEE Microwave and Wireless Components Letters
• Publisher: IEEE
• ISSN: 1531-1309
• ISSN (Online): 1558-1764
• Published Online: 27 September 2017
• Copyright Holders: Copyright © 2017 IEEE
• First Published: First published in IEEE Microwave and Wireless Components Letters 27(11): 1034-1036
• Publisher Policy: Reproduced in accordance with the publisher copyright policy