Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C. and Thayne, I. (2005) 50-nm T-gate metamorphic GaAs HEMTs with f(T) of 440 GHz and noise figure of 0.7 dB at 26 GHz. IEEE Electron Device Letters, 26, pp. 784-786. (doi: 10.1109/LED.2005.857716)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Thayne, Prof Iain and Stanley, Professor Colin and Moran, Professor David and Elgaid, Dr Khaled |
| Authors: | Elgaid, K., McLelland, H., Holland, M., Moran, D., Stanley, C., and Thayne, I. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Electron Device Letters |
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