Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study

Samsudin, K., Adamu-Lerna, F., Brown, A.R., Roy, S. and Asenov, A. (2007) Combined sources of intrinsic parameter fluctuations in sub-25 nm generation UTB-SOI MOSFETs: A statistical simulation study. Solid-State Electronics, 51, pp. 611-616. (doi: 10.1016/j.sse.2007.02.022)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Asenov, Professor Asen and Roy, Professor Scott
Authors: Samsudin, K., Adamu-Lerna, F., Brown, A.R., Roy, S., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Solid-State Electronics
ISSN:0038-1101

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