Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs

Borici, M., Watling, J., Wilkins, R., Yang, L., Barker, J. and Asenov, A. (2004) Interface roughness scattering and its impact on electron transport in relaxed and strained Si n-MOSFETs. Semiconductor Science and Technology, 19, S155-S157. (doi: 10.1088/0268-1242/19/4/054)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Barker, Professor John and Watling, Dr Jeremy and Asenov, Professor Asen
Authors: Borici, M., Watling, J., Wilkins, R., Yang, L., Barker, J., and Asenov, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Semiconductor Science and Technology

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