Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A. and Roy, S. (2004) Si/SiGe heterostructure parameters for device simulations. Semiconductor Science and Technology, 19, pp. 1174-1182.
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
| Authors: | Yang, L., Watling, J., Wilkins, R., Borici, M., Barker, J., Asenov, A., and Roy, S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | Semiconductor Science and Technology |
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