Watling, J., Yang, L., Asenov, A., Barker, J. and Roy, S. (2005) Impact of high-k dielectric HfO2 on the mobility and device performance of sub-100-nm nMOSFETs. IEEE Transactions on Device and Materials Reliability, 5, pp. 103-108. (doi: 10.1109/TDMR.2005.845238)
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| Item Type: | Articles |
|---|---|
| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Barker, Professor John and Asenov, Professor Asen and Watling, Dr Jeremy and Roy, Professor Scott |
| Authors: | Watling, J., Yang, L., Asenov, A., Barker, J., and Roy, S. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| Journal Name: | IEEE Transactions on Device and Materials Reliability |
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