Zhou, H., Elgaid, K., Wilkinson, C. and Thayne, I. (2006) Low-hydrogen-content silicon nitride deposited at room temperature by inductively coupled plasma deposition. Japanese Journal of Applied Physics, 45(Pt.1), pp. 8388-8392. (doi: 10.1143/JJAP.45.8388)
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Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Zhou, Dr Haiping and Thayne, Prof Iain and Wilkinson, Professor Christopher and Elgaid, Dr Khaled |
Authors: | Zhou, H., Elgaid, K., Wilkinson, C., and Thayne, I. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Japanese Journal of Applied Physics |
Publisher: | IOP Publishing |
ISSN: | 0021-4922 |
ISSN (Online): | 1347-4065 |
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