120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts

Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C. and Thayne, L. (2003) 120 nm gate length E-beam and nanoimprint T-gate GaAs pHEMTs utilising non-annealed ohmic contacts. In: Compound Semiconductors 2002: Proceedings of the 29th International Symposium, Lausanne, 7-11 October 2002. Series: Institute of Physics conference series (174). Institute of Physics, pp. 291-294. ISBN 0750309423

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Abstract

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Item Type:Book Sections
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin and Moran, Dr David and Elgaid, Dr Khaled and Macintyre, Dr Douglas
Authors: Boyd, E., Moran, D., McLelland, H., Elgaid, K., Chen, Y., Macintyre, D., Thorns, S., Stanley, C., and Thayne, L.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Publisher:Institute of Physics
ISBN:0750309423
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