Fabrication of T gate structures by nanoimprint lithography

Macintyre, D.S. (2001) Fabrication of T gate structures by nanoimprint lithography. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 19(6), pp. 2797-2800. (doi: 10.1116/1.1417552)

Abstract

Nanoimprint lithography is capable of patterning substrates with high definition patterns at relatively high patterning speeds. In this article we describe the fabrication of high resolution “T” gate resist profiles by imprint lithography. The fabrication of high resolution stamping tools and the imprinting process itself are critical to the success or failure of this technique and they are described in the article. Two different techniques were used to fabricate stamping tools. The first involved pattern definition by high resolution electron beam lithography followed by electroforming. The second involved pattern definition by electron beam lithography followed by a two stage silicon etching process. Imprinted T gate resist profiles with footwidths less than 100 nm in length were obtained on gallium arsenide substrates for the purpose of producing metallized gates for a self-aligned gate pro

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Macintyre, Dr Douglas
• Authors: Macintyre, D.S.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
• ISSN: 1071-1023