Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V. , Gamiz, F. and Asenov, A. (2017) Assessment of Gate Leakage Mechanism Utilizing Multi-Subband Ensemble Monte Carlo. In: 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS), Athens, Greece, 03-05 Apr 2017, pp. 144-147. ISBN 9781509053148 (doi: 10.1109/ULIS.2017.7962585)
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Abstract
The inclusion in advanced device simulators of quantum effects different than standard confinement becomes mandatory to describe device behavior as technology approaches the nanometer scales. This work presents a model to include the gate leakage mechanism considering direct and trap assisted tunneling in Multi-Subband Ensemble Monte Carlo (MS-EMC) simulators. The tool is used for the study of FDSOI and FinFET devices.
| Item Type: | Conference Proceedings |
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| Status: | Published |
| Refereed: | Yes |
| Glasgow Author(s) Enlighten ID: | Asenov, Professor Asen and Georgiev, Professor Vihar and Sadi, Dr Toufik |
| Authors: | Medina-Bailon, C., Sadi, T., Sampedro, C., Padilla, J.L., Godoy, A., Donetti, L., Georgiev, V., Gamiz, F., and Asenov, A. |
| College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
| ISSN: | 2472-9132 |
| ISBN: | 9781509053148 |
| Copyright Holders: | Copyright © 2017 IEEE |
| First Published: | First published in 2017 Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon (EUROSOI-ULIS): 144-147 |
| Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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