Thirunavukkarasu, V. et al. (2017) Investigation of inversion, accumulation and junctionless mode bulk Germanium FinFETs. Superlattices and Microstructures, 111, pp. 649-655. (doi: 10.1016/j.spmi.2017.07.020)
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Abstract
The characteristic performance of n-type and p-type inversion (IM) mode, accumulation (AC) mode and junctionless (JL) mode, bulk Germanium FinFET device with 3-nm gate length (LG) are demonstrated by using 3-D quantum transport device simulation. The simulated bulk Ge FinFET device exhibits favorable short channel characteristics, including drain-induced barrier lowering (DIBL<10mV/V), sub threshold slope (SS∼64mV/dec.). Electron density distributions in ON-state and OFF-state also show that the simulated devices have large ION/IOFF ratios. Homogenous source/drain doping is maintained and only the channel doping is varied among different operating modes. Also, a constant threshold voltage |VTH|∼0.31V is maintained. Moreover, the calculated quantum capacitance (CQ) values of the Ge nanowire emphasizes the importance of quantum confinement effects (QCE) on the performance of the ultra-scaled devices.
Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Sadi, Dr Toufik and Lee, Mr Jaehyun and Georgiev, Professor Vihar and THIRUNAVUKKARASU, VASANTHAN and Asenov, Professor Asen |
Authors: | Thirunavukkarasu, V., Lee, J., Sadi, T., Georgiev, V. P., Lema, F.-A., Soundarapandian, K. P., Jhan, Y.-R., Yang, S.-Y., Lin, Y.-R., Kurniawan, E. D., Wu, Y.-C., and Asenov, A. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Superlattices and Microstructures |
Publisher: | Elsevier |
ISSN: | 0749-6036 |
ISSN (Online): | 1096-3677 |
Published Online: | 07 July 2017 |
Copyright Holders: | Copyright © 2017 Elsevier Ltd. |
First Published: | First published in Superlattices and Microstructures 111: 649-655 |
Publisher Policy: | Reproduced in accordance with the publisher copyright policy |
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