Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon

Ho, H., Lo, K., Chu, P., Chan, K., Li, J., Kwok, D., Pun, E. and Marsh, J. (2001) Controlled intermixing in InGaAsP multiquantum wells by plasma immersion ion implantation of argon. Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 173, pp. 304-310.

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Marsh, Professor John
Authors: Ho, H., Lo, K., Chu, P., Chan, K., Li, J., Kwok, D., Pun, E., and Marsh, J.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

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