Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks

Floros, K., Li, X. , Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E. , Moran, D. A.J. , Humphreys, C. J. and Thayne, I. G. (2017) Dual barrier InAlN/AlGaN/GaN-on-silicon high-electron-mobility transistors with Pt and Ni based gate stacks. Physica Status Solidi A: Applications and Materials Science, 214(8), 1600835. (doi: 10.1002/pssa.201600835)

Abstract

In this work, we report the performance of 3 μm gate length "dual barrier„ InAlN/AlGaN/GaN HEMTs on Si substrates with gate-drain contact separations in the range 4-26 μm. Devices with Pt and Ni based gates were studied and their leakage characteristics are compared. Maximum drain current IDS of 1 A/mm, maximum extrinsic transconductance gm ~203 mS/mm and on-resistance Ron 4.07 Ω mm for gate to drain distance LGD = 4 μm were achieved. Nearly ideal sub-threshold swing of 65.6 mV/dec was obtained for LGD = 14 μm. The use of Pt based gate metal stacks led to a two to three orders of magnitude gate leakage current decrease compared to Ni based gates. The influence of InAlN layer thickness on the transistor transfer characteristics is also discussed.

• Item Type: Articles
• Keywords: HEMT, GaN, InAlN, AlGaN, silicon.
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Wasige, Professor Edward and Thayne, Prof Iain and Floros, Mr Konstantinos and HEMAKUMARA, Dilini and Moran, Professor David and Li, Dr Xu and Cho, Dr Sung-Jin
• Authors: Floros, K., Li, X., Guiney, I., Cho, S.-J., Hemakumara, D., Wallis, D. J., Wasige, E., Moran, D. A.J., Humphreys, C. J., and Thayne, I. G.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Research Group: GaN Power Electronics
• Journal Name: Physica Status Solidi A: Applications and Materials Science
• Publisher: Wiley
• ISSN: 1862-6300
• ISSN (Online): 1862-6319
• Published Online: 20 July 2017
• Copyright Holders: Copyright © 2017 Wiley-VCH Verlag GmbH & Co.
• First Published: First published in Physica Status Solidi A: Applications and Materials Science 214(8): 1600835
• Publisher Policy: Reproduced under a Creative Commons License

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
60076	1	Silicon Compatible GaN Power Electronics	Iain Thayne	Engineering and Physical Sciences Research Council (EPSRC)	EP/K014471/1	ENG - ENGINEERING ELECTRONICS & NANO ENG