Skuras, E. and Stanley, C. (2007) Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures. Applied Physics Letters, 90, (doi: 10.1063/1.2716844)
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Item Type: | Articles |
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Status: | Published |
Refereed: | Yes |
Glasgow Author(s) Enlighten ID: | Stanley, Professor Colin |
Authors: | Skuras, E., and Stanley, C. |
College/School: | College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering |
Journal Name: | Applied Physics Letters |
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