Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures

Skuras, E. and Stanley, C. (2007) Fermi energy pinning at the surface of high mobility In0.53Ga0.47As/In0.52Al0.48As modulation doped field effect transistor structures. Applied Physics Letters, 90, (doi: 10.1063/1.2716844)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Stanley, Professor Colin
Authors: Skuras, E., and Stanley, C.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters

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