Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model

Qiu, Y., Rorison, J., Sun, H., Calvez, S., Dawson, M. and Bryce, A. (2005) Influence of composition diffusion on the band structures of InGaNAs/GaAs quantum wells investigated by the band-anticrossing model. Applied Physics Letters, 87, (doi: 10.1063/1.2138350)

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Item Type:Articles
Status:Published
Refereed:Yes
Glasgow Author(s) Enlighten ID:Bryce, Prof Ann
Authors: Qiu, Y., Rorison, J., Sun, H., Calvez, S., Dawson, M., and Bryce, A.
College/School:College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
Journal Name:Applied Physics Letters

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