Monolithically-integrated TE-mode 1D silicon-on-insulator isolators using seedlayer-free garnet

Zhang, C., Dulal, P., Stadler, B. J.H. and Hutchings, D. C. (2017) Monolithically-integrated TE-mode 1D silicon-on-insulator isolators using seedlayer-free garnet. Scientific Reports, 7, 5820. (doi: 10.1038/s41598-017-06043-z) (PMID:28725052) (PMCID:PMC5517653)

Abstract

The first experimental TE-mode silicon-on-insulator (SOI) isolators using Faraday Rotation are here realized to fill the ‘missing link’ in source-integrated near infrared photonic circuits. The isolators are simple 1D 2-element waveguides, where garnet claddings and longitudinal magnetic fields produce nonreciprocal mode conversion, the waveguide equivalent of Faraday Rotation (FR). Quasi-phase matched claddings are used to overcome the limitations of birefringence. Current experimental SOI isolators use nonreciprocal phase shift (NRPS) in interferometers or ring resonators, but to date NRPS requires TM-modes, so the TE-modes normally produced by integrated lasers cannot be isolated without many ancillary polarisation controls. The presented FR isolators are made via lithography and sputter deposition, which allows facile upscaling compared to the pulsed laser deposition or wafer bonding used in the fabrication of NRPS devices. Here, isolation ratios and losses of 11 dB and 4 dB were obtained, and future designs are identified capable of isolation ratios >30 dB with losses <6 dB.

• Item Type: Articles
• Status: Published
• Refereed: Yes
• Glasgow Author(s) Enlighten ID: Hutchings, Professor David and Zhang, Miss Cui
• Authors: Zhang, C., Dulal, P., Stadler, B. J.H., and Hutchings, D. C.
• College/School: College of Science and Engineering > School of Engineering > Electronics and Nanoscale Engineering
• Journal Name: Scientific Reports
• Publisher: Nature Research
• ISSN: 2045-2322
• ISSN (Online): 2045-2322
• Copyright Holders: Copyright © 2017 The Authors
• First Published: First published in Scientific Reports 7: 5820
• Publisher Policy: Reproduced under a Creative Commons license
• Data DOI: 10.5525/gla.researchdata.397

Project Code	Award No	Project Name	Principal Investigator	Funder's Name	Funder Ref	Lead Dept
59468	1	Materials World Network: Complex oxides for heterogeneous optoelectronic integration	David Hutchings	Engineering and Physical Sciences Research Council (EPSRC)	EP/J018708/1	ENG - ENGINEERING ELECTRONICS & NANO ENG